A SMALL-SIGNAL ANALYSIS BASED THERMAL NOISE MODELING METHOD FOR RF SOI MOSFETS
نویسندگان
چکیده
منابع مشابه
A Small-Signal Analysis Based Thermal Noise Modeling Method for RF SOI MOSFETs
We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) ga...
متن کاملAccurate Small-Signal Modeling of FD-SOI MOSFETs
A new small-signal model for fully depleted silicon-oninsulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range ...
متن کاملHigh-Frequency Small Signal AC and Noise Modeling of MOSFETs for RF IC Design
In this paper, high-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both parameter and characteristics. Good model accuracy is achieved against measurements for a 0.25 m RF CMOS technology. The HF n...
متن کاملRF Noise Models of MOSFETs- A Review
A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated in short channel MOSFETs has made researchers revisit the problem to develop better models, especially in recent years. In this review, a detailed discussion of the most rec...
متن کاملPhysics-Based Simulation Techniques for Small- and Large-Signal Device Noise Analysis in RF Applications
The paper presents a review on physics-based noise simulation techniques for RF semiconductor devices, starting with the small-signal case but with greater stress on noise in largesignal (quasi)-periodic operation. The nonautonomous (forced) operation case will be considered, which is relevant to all RF applications apart from oscillators. Besides their importance in device design, physics-base...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Progress In Electromagnetics Research M
سال: 2017
ISSN: 1937-8726
DOI: 10.2528/pierm17030608